Conductive paste and semiconductor component having conductive bumps made from the conductive paste

ABSTRACT

A conductive paste ( 16 ) for use in making conductive bumps ( 18 ) and a method for using the conductive paste to make conductive bumps ( 18 ) on a substrate ( 10 ). The conductive paste ( 16 ) is formed by combining a tin alloy with a flux composition containing an aromatic carboxylic acid fluxing agent and a solvent. The conductive paste ( 16 ) is disposed on underbump metallization layers ( 15 ) and reflowed to form the conductive bumps ( 18 ).

This application is a divisional application of U.S. patent applicationSer. No. 09/323,464 filed Jun. 1, 1999 now U.S. Pat. No. 6,451,127.

BACKGROUND OF THE INVENTION

The present invention relates, in general, to electrical interconnectsand, more particularly, to interconnect bumps.

Semiconductor manufacturers often form conductive bumps on semiconductorchips to facilitate electrical contact to substrates such as printedcircuit boards, Tape Automated Bonding (TAB) substrates, leadframes,etc. Advantages of using conductive bumps include: increased Input andOutput (I/O) density, which results in a smaller device “footprint,”increased signal propagation speed due to shorter interconnections,reduced vertical profile, and lower device weight.

Typically, the conductive bumps are formed by depositing a layer ofmasking or stencil material over the substrate, forming openings in thesolder mask, disposing a conductive paste in the openings, and reflowingthe conductive paste to form the conductive bumps. A disadvantage ofpresently available conductive pastes is that voids are formed in theconductive bumps after reflowing the conductive paste. These voidsweaken the joints between the conductive bumps and the substrates, whichresult in reliability problems. In addition, residual flux remains afterthe reflow step that is difficult to remove. This residual flux reducesthe adhesive strength between the conductive bumps and the underfillmaterial and increases the device leakage current.

Accordingly, it would be advantageous to have a conductive paste formaking conductive bumps and a method for making conductive bumps havinga reduced number of voids. It would be of further advantage to be ableto form conductive bumps that can be easily and cost efficiently cleanedafter reflow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a highly enlarged cross-sectional view of a semiconductorwafer at a beginning stage of manufacture in accordance with anembodiment of the present invention;

FIG. 2 is a highly enlarged cross-sectional view of the semiconductorwafer of FIG. 1 during manufacture; and

FIG. 3 is a highly enlarged cross-sectional view of the semiconductorwafer of FIG. 1 having conductive bumps formed thereon in accordancewith an embodiment of the present invention.

For simplicity and clarity of illustration, elements in the drawings arenot necessarily drawn to scale, and the same reference numerals indifferent figures denote the same elements.

DETAILED DESCRIPTION OF THE DRAWINGS

Generally, the present invention provides a conductive paste, such as,for example, a solder paste, and a method for forming conductive bumpsusing the conductive paste. Conductive bumps manufactured using theconductive paste of the present invention have fewer voids than thosemade with presently available conductive pastes. Further, any residualconductive paste that remains after the reflow step can be convenientlyremoved using water.

In accordance with a first embodiment of the present invention, theconductive paste is formed by combining a tin alloy with a fluxcomposition comprising an aromatic carboxylic acid fluxing agent and asolvent. Suitable tin alloys include: a tin-silver alloy that containsapproximately 3.5 weight percent silver (SnAg3.5); a tin-copper alloythat contains approximately 0.7 weight percent copper (SnCu0.7); atin-silver-bismuth alloy that contains approximately 2 weight percentsilver and approximately 2 weight percent bismuth (SnAg2Bi2); atin-silver-copper alloy that contains approximately 4 weight percentsilver and approximately 0.5 weight percent copper (SnAg4Cu0.5); atin-antimony alloy that contains approximately 5 weight percent antimony(SnSb5); and a tin-lead alloy (SnPb), where the tin content in thetin-lead alloy ranges from approximately 2 weight percent toapproximately 70 weight percent. The aromatic-carboxylic acid has thegeneral formula:

where

R is hydrogen or an alkyl group comprising from 1 to 16 carbon atoms;

and n is an integer ranging from 0 to 3.

The polymeric solvent is a non-boiling polymeric solvent having thegeneral formula:

where

n is an integer ranging from 6 to 100;

R1 is hydrogen or an alkyl group comprising from 1 to 20 carbon atoms;and

R2 is hydrogen or an alkyl group comprising from 1 to 20 carbon atoms.

Preferably, the fluxing composition comprises approximately 12.5 weightpercent 4-hydroxy benzoic acid as the aromatic carboxylic acid fluxingagent and approximately 87.5 weight percent polypropylene glycol etheras the non-boiling polymeric solvent. Further, when using this formulaas the flux composition, it is preferable to perform a double reflowstep to form the conductive bumps.

In accordance with a second embodiment of the present invention, theconductive paste is formed by combining a tin alloy with a fluxcomposition comprising an aromatic carboxylic acid fluxing agent, a fluxcarrier, and a solvent. Similar to the first embodiment, suitable tinalloys include: a tin-silver alloy that contains approximately 3.5weight percent silver (SnAg3.5); a tin-copper alloy that containsapproximately 0.7 weight percent copper (SnCu0.7); a tin-silver-bismuthalloy that contains approximately 2 weight percent silver andapproximately 2 weight percent bismuth (SnAg2Bi2); a tin-silver-copperalloy that contains approximately 4 weight percent silver andapproximately 0.5 weight percent copper (SnAg4Cu0.5); a tin-antimonyalloy that contains approximately 5 weight percent antimony (SnSb5); anda tin-lead alloy (SnPb), where the tin content in the tin-lead alloyranges from approximately 2 weight percent to approximately 70 weightpercent. The aromatic carboxylic acid has the general formula:

where R is hydrogen or an alkyl group comprising from 1 to 16 carbonatoms; and

n is an integer ranging from 0 to 3.

The flux carrier has the general formula:

HOCH₂CH₂O_(n)H

where n is an integer ranging from 5 to 100.

The polymeric solvent is a non-boiling polymeric solvent having thegeneral formula:

where

n is an integer ranging from 6 to 100;

R1 is hydrogen or an alkyl group comprising from 1 to 20 atoms; and

R2 is hydrogen or an alkyl group comprising from 1 to 20 atoms.

Preferably, the fluxing composition comprises approximately 12.5 weightpercent 4-hydroxy benzoic acid as the aromatic carboxylic acid fluxingagent, approximately 33.3 weight percent polyethylene glycol, i.e.,where n=20, as the flux carrier, and approximately 54.2 weight percentpolypropylene glycol ether as the non-boiling polymeric solvent.Further, when using this formulation as the flux composition, it ispreferable to use a tin-lead alloy as the metal, wherein the weightpercent of tin in the tin-lead alloy ranges from approximately 2 weightpercent to approximately 70 weight percent.

In accordance with a third embodiment of the present invention, theconductive paste is formed by combining a tin alloy with a fluxcomposition as described in the second embodiment, except that the fluxof the third embodiment contains a mixture of aromatic and aliphaticacids. The aliphatic acid has the general formula:

HOOCCH₂_(n)COOH

where n is an integer ranging from 0 to 16.

Similar to the second embodiment, the fluxing composition comprisesapproximately 12.5 weight percent 4-hydroxy benzoic acid as the aromaticcarboxylic acid fluxing agent, approximately 33.3 weight percentpolyethylene glycol, i.e., n=20, as the flux carrier, and approximately54.2 weight percent polypropylene glycol butyl ether as the non-boilingpolymeric solvent.

In accordance with a fourth embodiment of the present invention, theconductive paste is formed by combining a tin alloy with a fluxcomposition comprising an aromatic carboxylic acid fluxing agent, a fluxcarrier, a secondary flux, and a solvent. Similar to the first andsecond embodiments, suitable tin alloys include: a tin-silver alloy thatcontains approximately 3.5 weight percent silver (SnAg3.5); a tin-copperalloy that contains approximately 0.7 weight percent copper (SnCu0.7); atin-silver-bismuth alloy that contains approximately 2 weight percentsilver and approximately 2 weight percent bismuth (SnAg2Bi2); atin-silver-copper alloy that contains approximately 4 weight percentsilver and 0.5 weight percent copper (SnAg4Cu0.5); a tin-antimony alloythat contains approximately 5 weight percent antimony (SnSb5); and atin-lead alloy (SnPb), where the tin content of the tin-lead alloy isranges from approximately 2 weight percent to approximately 70 weightpercent. The aromatic carboxylic acid has the general formula:

where R is hydrogen or an alkyl group comprising from 1 to 20 carbonatoms; and

n is an integer ranging from 0 to 3.

The flux carrier has the general formula:

HOCH₂CH₂O_(n)H

where n is an integer ranging from 5 to 100.

The secondary flux has the general formula:

HOOCCH₂_(n)COOH

where n is an integer ranging from 0 to 16.

The polymeric solvent is a non-boiling polymeric solvent having thegeneral formula:

where

n is an integer ranging from 6 to 100;

R1 is hydrogen or an alkyl group having from 1 to 18 carbon atoms; and

R2 is hydrogen or an alkyl group having from 1 to 18 carbon atoms.

Preferably, the fluxing composition comprises 17 weight percent4-hydroxy benzoic acid as the aromatic carboxylic acid fluxing agent, 12weight percent polyethylene glycol as the flux carrier, 6 weight percentadipic acid as the secondary flux carrier, and 65 weight percentpolypropylene glycol ether as the non-boiling polymeric solvent.

Techniques for combining the constituents of the flux composition andthe metal alloy are known to those skilled in the art.

FIG. 1 is a highly enlarged cross-sectional view of a semiconductorwafer 10 having a surface 11 and a plurality of bond pads 13 formed onsurface 11. In addition, a layer 12 of dielectric material is formed onsurface 11 and portions of bond pads 13. Optionally, an underbumpmetallization layer 15 is formed on bond pads 13. Techniques for formingbond pads on the surface of a semiconductor wafer and underbumpmetallization on a bond pad are well known to those skilled in the art.Further, it is well known that semiconductor wafers are comprised of aplurality of semiconductor chips that contain circuit elements such astransistors, diodes, integrated circuits, passive elements, etc. Bondpads 13 and underbump metallization layers 15 make electrical contact tothe appropriate regions of the integrated circuit or semiconductordevice. It should be noted that the circuit elements are not shown inFIG. 1.

Still referring to FIG. 1, a layer of solder mask material 14 is formedon surface 11 and bond pads 12. Solder mask layer 14 is patterned suchthat underbump metallization layers 15 are exposed. It should beunderstood the use of a layer of solder mask material is not alimitation of the present invention. For example, a mechanical stencilor the like may be used rather than a layer of solder mask material.

Now referring to FIG. 2, a conductive paste 16, formulated in accordancewith the present invention, is applied to the solder mask layer 14 andinto the openings in solder mask layer 14. Preferably, conductive paste16 is dispensed, spread, or flooded on the surface of solder mask layer14 in order to roughly cover the surface of semiconductor wafer 10. Asqueegee (not shown) or other suitable instrument is used to sweepconductive paste 16 across solder mask layer 14 and to substantiallyfill the openings in solder mask layer 14. Excess conductive paste isremoved from the surface of solder mask layer 14.

Now referring to FIG. 3, the solder mask is removed and the conductivepaste reflowed to form conductive bumps 18. Conductive bumps 18 are alsoreferred to as solder bumps. The conductive bumps are then cleaned usingwater to remove the flux residue.

Although conductive bumps 16 are shown and described as being formed ona semiconductor wafer, it should be understood this is not a limitationof the present invention. For example, the conductive bumps can beformed on printed wire boards, flex circuits, metallized ceramic orglass, or the like.

By now it should be appreciated that a conductive paste and a method forusing the conductive paste have been provided. The conductive paste ofthe present invention produces conductive bumps having fewer voids thanconventional solder pastes. One reason for the reduction in the numberof voids is the formation of hydrogen bonds between the hydroxyl andcarboxyl groups on the aromatic carboxylic acid fluxing agent and thealkoxy groups on the solvent such that a very high flux concentrationcan be used in the paste. Another advantage of the present invention isthat residual flux can be easily cleaned using water. In addition, toreducing the cost for cleaning the conductive bumps, the use of water isa much more environmentally benign system.

What is claimed is:
 1. A method for forming a conductive bump,comprising the steps of: providing a substrate having a bond paddisposed thereon; disposing a soldering composition over the bond pad,wherein the soldering composition consists essentially of: an alloy oftin (Sn); a fluxing composition comprising: a fluxing agent, wherein thefluxing agent is an aromatic carboxylic acid derivative; and a polymericsolvent; and reflowing the soldering composition to form the conductivebump.
 2. The method of claim 1, wherein the step of providing thesubstrate includes providing a semiconductor wafer as the substrate. 3.The method of claim 2, wherein the step of providing the semiconductorwafer includes providing a silicon semiconductor wafer as the substrate.4. The method of claim 3, wherein the step of providing the substratefurther includes providing an underbump metallization layer over thebond pad, wherein the underbump metallization layer is disposed betweenthe bond pad and the soldering composition.
 5. The method of claim 1,further including the step of cleaning the conductive bump.
 6. Themethod of claim 1, wherein the step of disposing the solderingcomposition includes disposing the soldering composition which comprisesfrom 1 to 50 weight percent 4-hydroxybenzoic acid, from 0 to 40 weightpercent polyethylene glycol, from 2 to 99 weight percent polypropyleneglycol butyl ether, and from 0 to 30 weight percent adipic acid.
 7. Themethod of claim 6, wherein the soldering composition comprisesapproximately 17 weight percent 4-hydroxybenzoic acid, approximately11.9 weight percent polyethylene glycol, where n=20, approximately 65.4weight percent polypropylene glycol butyl ether, where n=65, andapproximately 5.7 weight percent adipic acid.